不間斷電源中的IGBT關(guān)斷過(guò)電壓抑制
吳濤1，陳功1，曹志輝2
1 中國(guó)電建集團(tuán)中南勘測(cè)設(shè)計(jì)研究院有限公司，湖南 長(zhǎng)沙 410014； 2 廣東電網(wǎng)公司韶關(guān)供電局，廣東 韶關(guān) 512028
摘 要：由于電路中雜散電感及絕緣柵雙極型晶體管(IGBT)反并聯(lián)二極管浪涌電壓的影響，IGBT在關(guān)斷過(guò)程中會(huì)產(chǎn)生過(guò)電壓尖峰。分析了IGBT關(guān)斷過(guò)程，提出了一種由過(guò)電壓采樣電路和動(dòng)態(tài)過(guò)電壓抑制電路構(gòu)成的有源IGBT過(guò)電壓抑制電路方案，并對(duì)該方案進(jìn)行仿真及實(shí)驗(yàn)，結(jié)果表明，該過(guò)電壓抑制電路能有效抑制IGBT過(guò)電壓產(chǎn)生，防止IGBT過(guò)電壓損壞，提高了UPS電源的可靠性和工作效率。
關(guān)鍵詞：不間斷電源；雜散電感；絕緣柵雙極型晶體管；過(guò)電壓
中圖分類號(hào)：TM464 文獻(xiàn)標(biāo)識(shí)碼：A 文章編號(hào)：1007-3175(2015)12-0028-05
Research on Overvoltage During Switch-Off of Insulated Gate Bipolar Transistor in Uninterruptable Power Supply
WU Tao1, CHEN Gong1, CAO Zhi-hui2
1 Power China Zhongnan Engineering Corporation Limited, Changsha 410014, China; 2 Shaoguan Power Bureau of Guangdong Power Grid Company, Shaoguan 512028, China
Abstract: Because of the impacts of stay inductances and antiparallel diode surge voltage of insulated gate bipolar transistors (IGBTs) on circuits, overvoltage peak will turn up during the switch-off of IGBTs. This paper analyzed the switch-off process of IGBTs and proposed a kind of active IGBTs overvoltage suppression circuit scheme composed of an overvoltage sampling circuit and a dynamic overvoltage suppression circuit. The simulation and experiment results show that the overvoltage suppression circuit can suppress the overvoltage of IGBTs effectively and prevent IGBTs broken down, which raises the reliability of power supply and its working efficiency.
Key words: uninterruptable power supply; stay inductance; insulated gate bipolar transistor; overvoltage
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